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EIC5359-8

Excelics Semiconductor
Part Number EIC5359-8
Manufacturer Excelics Semiconductor
Description Internally Matched Power FET
Published Aug 4, 2009
Detailed Description www.DataSheet4U.com EIC5359-8 5.30-5.90GHz, 8W Internally Matched Power FET • • • • • • • 5.30-5.90 GHz BANDWIDTH Inpu...
Datasheet PDF File EIC5359-8 PDF File

EIC5359-8
EIC5359-8

Overview
www.
DataSheet4U.
com EIC5359-8 5.
30-5.
90GHz, 8W Internally Matched Power FET • • • • • • • 5.
30-5.
90 GHz BANDWIDTH Input/Output Impedance Matched to 50 Ohms +39.
5 dBm Output Power at 1dB Compression 10 dB Power Gain at 1dB Compression 33% Power Added Efficiency -46 dBc IM3 at Po = 28.
5 dBm Hermetic Metal Flange Package Excelics EIC5359-8 YM SN ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIC5359-8 SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=5.
30-5.
90GHz, Vds=10V, Idsq=2200mA Gain at 1dB Compression f=5.
30-5.
90GHz, Vds=10V, Idsq=2200mA Power Added Efficiency at 1dB compression f=5.
30-5.
90GHz, Vds=10V, Idsq=2200mA Drain Current at 1dB Compression Output 3 Order Intermodulation Distortion f=5.
90GHz, ∆f=10MHz 2-Tone Test.
Pout=28.
5dBm S.
C.
L Saturated Drain Current Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=40mA rd MIN 38.
5 9 TYP 39.
5 10 33 2200 MAX UNIT dBm dB % P1dB G1dB PAE Id1dB IM3 Idss Vp Rth 2600 mA dBc -43 -46 4000 -2.
5 3.
5 4500 -4 4 mA V o Thermal Resistance (Au-Sn Eutectic Attach) C/W ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION AT 25°C SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation CONTINUOUS1,2 10V -4.
5V Idss 80mA @ 3dB Compression 150 oC -65 to +150 oC 32W Note: 1.
Exceeding any of the above ratings may result in permanent damage.
2.
Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc.
310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.
excelics.
com ...


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