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EIC5964-10

Excelics Semiconductor
Part Number EIC5964-10
Manufacturer Excelics Semiconductor
Description Internally Matched Power FET
Published Aug 4, 2009
Detailed Description www.DataSheet4U.com EIC5964-10 UPDATED 08/21/2007 5.90-6.40 GHz 10-Watt Internally Matched Power FET 2X 0.079 MIN 4X 0...
Datasheet PDF File EIC5964-10 PDF File

EIC5964-10
EIC5964-10

Overview
www.
DataSheet4U.
com EIC5964-10 UPDATED 08/21/2007 5.
90-6.
40 GHz 10-Watt Internally Matched Power FET 2X 0.
079 MIN 4X 0.
102 FEATURES • • • • • • • 5.
90–6.
40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.
5 dBm Output Power at 1dB Compression 10.
0 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at PO = 29.
5 dBm SCL 100% Tested for DC, RF, and RTH 0.
945 0.
803 Excelics EIC5964-10 0.
024 0.
580 YYWW SN 0.
315 0.
685 0.
010 0.
158 0.
617 0.
004 0.
055 0.
095 0.
055 0.
168 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH Caution! ESD sensitive device.
MIN 39.
5 9.
0 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 5.
90-6.
40GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 5.
90-6.
40GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 5.
90-6.
40GHz VDS = 10 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 3200mA f = 5.
90-6.
40GHz Drain Current at 1dB Compression f = 5.
90-6.
40GHz Outp...


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