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KRF7756

Guangdong Kexin Industrial
Part Number KRF7756
Manufacturer Guangdong Kexin Industrial
Description HEXFET Power MOSFET
Published Aug 20, 2009
Detailed Description SMD Type HEXFET Power MOSFET KRF7756 IC IC Features Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Pack...
Datasheet PDF File KRF7756 PDF File

KRF7756
KRF7756

Overview
SMD Type HEXFET Power MOSFET KRF7756 IC IC Features Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.
2mm) TSSOP-8 Unit: mm Available in Tape & Reel 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -4.
5V @ TA = 25 Continuous Drain Current, VGS @ -4.
5V @ TA = 70 Pulsed Drain Current *1 Power Dissipation *2 Power Dissipation *2 Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 VGS TJ, TSTG R JA Symbol VDS ID ID IDM @TA= 25 @TA = 70 PD PD Rating -12 -4.
3 -3.
5 -17 1.
0 0.
64 8 8 -55 to + 150 125 Unit V A W W m W/ V /W *1 Repetitive rating; pulse width limited by max.
junction temperature.
*2 Surface mounted on FR-4 board, 10sec www.
kexin.
com.
cn 1 SMD Type KRF7756 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = -250 A TJ ID = -1mA,Reference to 25 VGS = -4.
5V, ID = -4.
3A*1 Min -12 Typ Max Unit V -0.
006 0.
040 0.
058 0.
087 -0.
4 13 -1.
0 -25 -100 100 12 1.
8 2.
9 12 18 160 170 1400 310 240 -1.
0 18 2.
7 4.
4 -0.
9 V/ Static Drain-to-Source On-Resistance RDS(on) VGS = -2.
5V, ID = -3.
4A*1 VGS = -1.
8V, ID = -2.
2A*1 Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 400 s; duty cycle 2%.
Body Diode) VGS(th) gfs IDSS VDS = VGS, ID = -250 A VDS = -10V, ID = -4.
3A*1 VDS = -9.
6V, VGS = 0V VDS = -9.
6V, VGS = 0V, TJ = 70 V S A IGSS Qg Qgs Qgd t...


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