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RQA0005QXDQS

Part Number	RQA0005QXDQS
Manufacturer	Renesas Technology
Description	Silicon N-Channel MOS FET
Published	Aug 20, 2009
Detailed Description	www.DataSheet4U.com RQA0005QXDQS Silicon N-Channel MOS FET REJ03G1325-0100 Rev.1.00 Oct 16, 2006 Features • High Outpu...
Datasheet	RQA0005QXDQS PDF File

Overview

www.
DataSheet4U.
com RQA0005QXDQS Silicon N-Channel MOS FET REJ03G1325-0100 Rev.
1.
00 Oct 16, 2006 Features • High Output Power, High Gain, High Efficiency Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) • Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A R ) (Package Name : UPAK 3 3 2 1 1 1.
Gate 2.
Source 3.
Drain 4.
Source 4 2, 4 Note: Marking is “QX”.
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note1: Value at Tc = 25°C Symbol VDSS VGSS ID Pchnote1 Tch Tstg Ra...

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RQA0005QXDQS Silicon N-Channel MOS FET - Renesas Technology

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