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ESDA8V2-1J

ST Microelectronics

EOS and ESD Transil protection


Description
ESDA8V2-1J EOS and ESD Transil™ protection for charger and battery port Features ■ Breakdown voltage VBR = 8.2 V ■ Unidirectional device ■ High peak power dissipation: 500 W (8/20 µs waveform) ■ ESD protection level better than IEC 61000-4-2, level 4: 30 kV contact discharge ■ Low leakage current (< 0.5 µA @ 5 V) Benefits ■ High EOS and ESD protection level...



ST Microelectronics

ESDA8V2-1J

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