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IS61VF51232

Integrated Silicon Solution
Part Number IS61VF51232
Manufacturer Integrated Silicon Solution
Description 512K x 32 Synchronous Flow-through Static RAM
Published Oct 1, 2009
Detailed Description IS61VF51232 IS61VF51236 IS61VF10018 512K x 32, 512K x 36, 1024K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM ISSI ® ADVAN...
Datasheet PDF File IS61VF51232 PDF File

IS61VF51232
IS61VF51232

Overview
IS61VF51232 IS61VF51236 IS61VF10018 512K x 32, 512K x 36, 1024K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM ISSI ® ADVANCE INFORMATION October 2001 FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Linear burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs and data outputs • JEDEC 100-Pin TQFP and 119-pin PBGA package • Single +2.
5V, ±5% operation • Auto Power-down during deselect • Single cycle deselect • Snooze MODE for reduced-power standby • JTAG Boundary Scan for PBGA package DESCRIPTION The ISSI IS61VF51232, IS61VF51236, and IS61VF10018 are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications.
The IS61VF51232 is organized as 524,288 words by 32 bits and the IS61VF51236 is organized as 524,288 words by ...


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