N-Channel MOSFET
Description
FCA22N60N — N-Channel SupreMOS® MOSFET
FCA22N60N
N-Channel SupreMOS® MOSFET
600 V, 22 A, 165 mΩ
May 2014
Features
BVDSS > 650 V @ TJ = 150oC RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 11 A Ultra Low Gate Charge (Typ. Qg = 45 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 196.4 pF) 100% Avalanche Tested RoHS Compliant
Application
PDP...
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