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STB36NM60N

ST Microelectronics
Part Number STB36NM60N
Manufacturer ST Microelectronics
Description Power MOSFET
Published Oct 2, 2009
Detailed Description STB36NM60N N-channel 600 V, 0.98 Ω , 25 A, MDmesh™ II Power MOSFET in D2PAK Preliminary data Features Type STB36NM60N ■...
Datasheet PDF File STB36NM60N PDF File

STB36NM60N
STB36NM60N

Overview
STB36NM60N N-channel 600 V, 0.
98 Ω , 25 A, MDmesh™ II Power MOSFET in D2PAK Preliminary data Features Type STB36NM60N ■ ■ ■ VDSS @ TJmax 600V RDS(on) max <0.
105Ω ID 32A PW 250W 100% avalanche tested Low input capacitance and gate charge Low gate input resistance D²PAK 3 1 Application ■ Switching applications – Automotive Figure 1.
Internal schematic diagram Description This series of devices is designed using the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high efficiency conve...


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