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AGR19060E

TriQuint Semiconductor
Part Number AGR19060E
Manufacturer TriQuint Semiconductor
Description Transistor
Published Oct 5, 2009
Detailed Description AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19060E is a 60 W, 28 V N-channel la...
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AGR19060E
AGR19060E

Overview
AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.
GSM Features Typical performance over entire GSM band: — P1dB: 60 W typical.
— Continuous wave (CW) power gain: @ P1dB = 14.
5 dB.
— CW efficiency @ P1dB = 53% typical.
— Return loss: –12 dB.
Device Performance Features High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift over 20 years.
AGR19060EU (unflanged) AGR19060EF (flanged) Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 1930 MHz, 60 W CW output power.
Large signal impedance parameters available.
Figure 1.
Available Packages N-CDMA Features Typical 2 carrier N-CDMA performance: VDD = 28 V, IDQ = 700 mA, f1 = 1958.
75 MHz, f2 = 1961.
25 MHz, IS-95 CDMA (pilot, sync, paging, traffic codes 8—13).
Peak/average (P/A) = 9.
72 dB at 0.
01% probability on CCDF.
1.
2288 MHz transmission bandwidth (BW).
Adjacent channel power www.
DataSheet4U.
com ratio (ACPR) measured over 30 kHz BW at f1 – 885 kHz and f2 + 885 kHz.
Third-order intermodulation distortion (IM3) measured over a 1.
2288 MHz BW at f1 – 2.
5 MHz and f2 + 2.
5 MHz.
— Output power (POUT): 12 W.
— Power gain: 15.
5 dB.
— Efficiency: 23.
5%.
— IM3: –36 dBc.
— ACPR: –50.
5 dBc.
ESD Rating* AGR19060E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 EDGE Features Typical EDGE performance (1960 MHz, 26 V, IDQ = 500 mA): — Output power (POUT): 25 W.
— Power gain: 15.
3 dB.
— Efficiency: 37%.
— Modulation spectrum: @ ±400 kHz = –61.
0 dBc.
@ ±600 kHz = –74.
0 dBc.
— Error vector magnitude (...


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