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AGR21060E

TriQuint Semiconductor
Part Number AGR21060E
Manufacturer TriQuint Semiconductor
Description Transistor
Published Oct 5, 2009
Detailed Description AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21060E is a high-voltage, gold...
Datasheet PDF File AGR21060E PDF File

AGR21060E
AGR21060E

Overview
AGR21060E 60 W, 2.
110 GHz—2.
170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21060E is a high-voltage, gold-metalized, enhancement-mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications.
) Table 1.
Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR21060EU AGR21060EF Sym Rı JC Rı JC Value 1.
0 1.
0 Unit °C/W °C/W Table 2.
Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C: AGR21060EU AGR21060EF Derate Above 25 ° C: AGR21060EU AGR21...


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