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KSD362

Inchange Semiconductor Company
Part Number KSD362
Manufacturer Inchange Semiconductor Company
Description Silicon NPN Power Transistor
Published Oct 13, 2009
Detailed Description INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD362 DESCRIPTION ·Collector-Base...
Datasheet PDF File KSD362 PDF File

KSD362
KSD362

Overview
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD362 DESCRIPTION ·Collector-Base Breakdown Voltage: V(BR)CBO= 150V(Min) ·Collector Current- IC= 5A ·Collector Power Dissipation: PC= 40W@ TC= 25℃ APPLICATIONS ·Designed for B/W TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 70 V www.
DataSheet4U.
com VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 5 A PC 40 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.
iscsemi.
cn...


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