FDS8842NZ N-Channel Power Trench® MOSFET
FDS8842NZ
N-Channel PowerTrench® MOSFET
February 2009
40 V, 14.9 A, 7.0 mΩ Features
General Description
Max rDS(on) = 7.0 mΩ at VGS = 10 V, ID = 14.9 A Max rDS(on) = 11.6 mΩ at VGS = 4.5 V, ID = 11.6 A HBM ESD protection level of 4.4 kV typical(note 3)
High performance trench technology for extremely low ...
