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H40N03E
N-Channel Enhancement-Mode MOSFET
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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200517 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5 H40N03E N-Channel Enhancement-Mode MOSFET (25V, 40A) H40N03E Pin Assignment Tab Features RDS(on)=16mΩ@VGS=10V, ID=20A RDS(on)=25mΩ@VGS=4.5V, ID=20A Advanced trench process technology High Density Cell Design for Ultra Low On...
Hi-Sincerity Mocroelectronics
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H40N03E
N-Channel Enhancement-Mode MOSFET
- Hi-Sincerity Mocroelectronics
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