TC2591
REV4_20070507
1 W Flange Ceramic Packaged PHEMT GaAs Power FETs
FEATURES
1 W Typical Output Power at 6 GHz 12 dB Typical Linear Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz Suitable for High Reliability Application Breakdown Voltage: BVDGO ≥ 15 V Lg = ...