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IXZ308N120

Part Number	IXZ308N120
Manufacturer	IXYS Corporation
Description	Z-MOS RF Power MOSFET
Published	Oct 29, 2009
Detailed Description	IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear Switch 175MHz Mode RF RF MOSFET MOSFET Lo Capacitance...
Datasheet	IXZ308N120 PDF File

Overview

IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear Switch 175MHz Mode RF RF MOSFET MOSFET Lo Capacitance Low Capacitance Z-MOS Z-MOS MOSFET MOSFET Process Process TMTM Optimized for RF Linear Operation Operation Ideal for Class AB C, D, & C, &E Broadcast Applications & Communications Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.
2Ω IS = 0 VDSS ID25 RDS(on) PDC = = = = 1200 V 8.
0 A 2.
1 Ω 880 W Maximum Ratings 1200 1200 ±20 ±30 8 40 8 TBD V V V V A...

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IXZ308N120 Z-MOS RF Power MOSFET - IXYS Corporation

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