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P10NB20FP

STMicroelectronics
Part Number P10NB20FP
Manufacturer STMicroelectronics
Description STP10NB20FP
Published Nov 19, 2009
Detailed Description STP10NB20 STP10NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STP10NB20 STP10NB20F P s s s s s V DSS 200 V ...
Datasheet PDF File P10NB20FP PDF File

P10NB20FP
P10NB20FP

Overview
STP10NB20 STP10NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STP10NB20 STP10NB20F P s s s s s V DSS 200 V 200 V R DS(on) < 0.
40 Ω < 0.
40 Ω ID 10 A 6 A TYPICAL RDS(on) = 0.
3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching charac...


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