DatasheetsPDF.com

EIB1415-0.3P

Excelics Semiconductor
Part Number EIB1415-0.3P
Manufacturer Excelics Semiconductor
Description Internally Matched Power FET
Published Nov 20, 2009
Detailed Description EIB1415-0.3P UPDATED 8/31/2006 14.0-14.5 GHz 0.3-Watt Internally Matched Power FET 0.080 MIN Excelics EIB1415-0.3P 0...
Datasheet PDF File EIB1415-0.3P PDF File

EIB1415-0.3P
EIB1415-0.3P

Overview
EIB1415-0.
3P UPDATED 8/31/2006 14.
0-14.
5 GHz 0.
3-Watt Internally Matched Power FET 0.
080 MIN Excelics EIB1415-0.
3P 0.
080 MIN DRAIN 0.
020 0.
250 FEATURES • • • • • • 14.
0– 14.
5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +26.
0 dBm Output Power at 1dB Compression 8.
0 dB Power Gain at 1dB Compression 32% Power Added Efficiency Non - Hermetic Metal Flange Package 0.
433 0.
362 GATE YYWW SN 0.
070 0.
256 0.
200 0.
004 0.
051 0.
025 0.
100 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.
0-14.
5GHz VDS = 8 V, IDSQ ≈ 120mA Gain at 1dB Compression f = 14.
0-14.
5GHz VDS = 8 V, IDSQ ≈ 120mA Gain Flatness f = 14.
0-14.
5GHz VDS = 8 V, IDSQ ≈ 120mA Power Added Efficiency at 1dB Compression f = 14.
0-14.
5GHz VDS = 8 V, IDSQ ≈ 120mA Drain Current at 1dB Compression f = 14.
0-14.
5GHz Output 3rd Order Intermodulation Distortion ∆f=10MHz 2-Tone Test.
Pout=14.
0 dBm S.
C.
L Vds = 8 V, IDSQ ≈ 65% IDSS f = 14.
5GHz Saturated Drain Current Thermal Resistance 3 Caution! ESD sensitive device.
MIN 24.
0 7.
0 TYP 26.
0 8.
0 MAX UNITS dBm dB ±0.
6 32 130 -43 -46 210 -2.
0 55 300 -3.
5 60 o dB % 150 mA dBc mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 2.
0 mA 2) S.
C.
L.
= Single Carrier Level.
www.
DataSheet4U.
com Pinch-off Voltage VP Note: 1) Tested with 200 Ohm gate resistor.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12 -5 3.
6mA -0.
6mA 24.
0dBm 175 C o -65 to +175 C o CONTINUOUS2 8V -4V 1.
2mA -0.
2mA @ 3dB Compression 175 C -65 to +175 oC 2.
5W o Vds Vgs Igsf Igsr Pin Tch Tstg Pt 2.
5W Note: 1.
Exceeding any of the above ratings may result in permanent damage.
2.
Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications a...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)