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STD18NF25

ST Microelectronics
Part Number STD18NF25
Manufacturer ST Microelectronics
Description Automotive-grade N-channel MOSFET
Published Dec 17, 2009
Detailed Description STD18NF25 Datasheet Automotive-grade N-channel 250 V, 140 mΩ typ., 17 A STripFET II Power MOSFET in a DPAK package Feat...
Datasheet PDF File STD18NF25 PDF File

STD18NF25
STD18NF25

Overview
STD18NF25 Datasheet Automotive-grade N-channel 250 V, 140 mΩ typ.
, 17 A STripFET II Power MOSFET in a DPAK package Features TAB 23 1 DPAK D(2, TAB) Order code STD18NF25 VDS 250 V RDS(on) max.
165 mΩ ID 17 A • AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge Applications G(1) • Switching applications S(3) Description AM01475v1_noZen This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.
This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Product status link STD18NF25 Product summary Order code STD18NF25 Marking 18NF25 Package DPAK Packing Tape and reel DS6601 - Rev 6 - July 2023 For further information contact your local STMicroelectronics sales office.
www.
st.
com STD18NF25 Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope TJ Operating junction temperature range Tstg Storage temperature range 1.
Pulse width limited by safe operating area.
2.
ISD ≤ 17 A, di/dt ≤ 200 A/μs, VDS (peak) ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Table 2.
Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJA (1) Thermal resistance, junction-to-ambient 1.
When mounted on 1 inch² FR-4, 2 Oz copper board.
Symbol IAR EAS Table 3.
Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) Value 250 ±20...


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