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WTM5551

Weitron Technology
Part Number WTM5551
Manufacturer Weitron Technology
Description EPITAXIAL PLANAR TRANSISTOR
Published Dec 22, 2009
Detailed Description WTM5551 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 Features: * Switching and ...
Datasheet PDF File WTM5551 PDF File

WTM5551
WTM5551

Overview
WTM5551 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.
BASE 2.
COLLECTOR 3.
EMITTER 1 Features: * Switching and amplification in high Voltage Applications such as Telephony.
* Low Current(Max.
600mA) * High Voltage(Max.
180V) 2 3 SOT-89 Mechanical Data: * Case : Molded Plastic ABSOLUTE MAXIMUM RATINGS(TA=25ºC Unless Otheerwise Noted) Rating Collector to Base Voltage Collector to Emitter Voltage www.
DataSheet4U.
com Symbol VCBO VCEO VEBO IC PD RθJA Tj Tstg Value 180 160 6 0.
6 0.
5 104 +150 -65 to +150 Unit V V V A W ˚C/W ˚C ˚C Collector to Base Voltage Collector Current Total Device Disspation TA=25°C Thermal Resistance Junction Temperature Storage Temperature WEITRON http://www.
weitron.
com.
tw 1/4 18-Nov-05 WTM5551 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=100µA, IE=0 Collector-Emitter Breakdown Voltage IC=1mA, IB=0 Emitter-Base Breakdown Voltage IE=10µA, IC=0 Collector Cut-Off Current VCB=120V, IE=0 Emitter-Cut-Off Current VEB=4V, IC...


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