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IFE80-06

Part Number	IFE80-06
Manufacturer	FULL POWER SEMICONDUCTOR
Description	8A FAST EFFICIENT RECTIFIER
Published	Jan 4, 2010
Detailed Description	IFE80-06 FULL POWER SEMICONDUCTOR 8A FAST EFFICIENT RECTIFIER FEATURES l Low power loss, high efficiency l Low forward ...
Datasheet	IFE80-06 PDF File

Overview

IFE80-06 FULL POWER SEMICONDUCTOR 8A FAST EFFICIENT RECTIFIER FEATURES l Low power loss, high efficiency l Low forward voltage drop l High current capability l High speed switching l High reliability l High current surge l Glass passivated chip junction l Plastic material has UL flammability classification 94V-0 O B C D 1 2 J K B C D E F G H I J K L M O Millimeters MIN MAX 9.
72 10.
27 6.
30 6.
90 15.
50 14.
50 13.
00 13.
80 4.
1 4.
95 5.
20 1.
52 0.
9 4.
8 3.
1 2.
5 2.
9 0.
8 Ø 3.
0 Ø 3.
4 F H E M L MECHANICAL DATA l Case：JEDEC ITO-220 molded plastic.
l Lead：Solderable per MIL-STD-202, method 208 l Mounting position：Any l Weight： 1.
81 grams I G PIN 1 PIN 2 CASE: ITO-220 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20% SYMBOL CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS Maximum DC Blocking Voltage VDC www.
DataSheet4U.
com Maximum Average Forward Rectified Current IO Peak Forward Surge Current, 8.
3ms Single Half Sine-Wave IFSM Superimposed on Rated Load Typical Junction Capacitance (Note 1) CJ Typical Thermal Resistance (Note 2) ROJA Operating Temperature Range TOP Storage Temperature Range TSTG Maximum Forward Voltage at IO DC VF IR Maximum Reverse Current at TA = 25℃ I Maximum Reverse Current at TA = 100℃ R Maximum Reverse Recovery Time (Note 3) TRR NOTE： 1.
Measured at 1 MHz and applied reverse voltage of 4.
0 volts 2.
Both leads attached to heat sink 20×20×1t(mm) copper plate at lead length 5mm 3.
Reverse recovery test conditions: IF=0.
5A, IR=1.
0A, IRR=0.
25A IFE80-06 600 420 600 8.
0 150 60 2.
2 - 55 TO + 150 -55 TO + 150 1.
85 10 100 25 UNITS V V V A A pF ℃/W ℃ ℃ V µA µA nS RATINGS AND CHARACTERISTIC CURVE IFE80-06 Fig.
1 -Test Circuit Diagram And Reverse Recovery Time Characteristic 50Ω NONINDUCTIVE 10Ω NONINDUCTIVE Trr (-) D.
U.
T.
(+) 25 Vdc (approx) Pulse Generator ( Note...

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IFE80-06 8A FAST EFFICIENT RECTIFIER - FULL POWER SEMICONDUCTOR

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