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BLD6G22L-50

NXP Semiconductors
Part Number BLD6G22L-50
Manufacturer NXP Semiconductors
Description W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor
Published Jan 11, 2010
Detailed Description BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 01 — 15 December 2009 Obj...
Datasheet PDF File BLD6G22L-50 PDF File

BLD6G22L-50
BLD6G22L-50

Overview
BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev.
01 — 15 December 2009 Objective data sheet 1.
Product profile 1.
1 General description The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXP’s state of the art GEN6 LDMOS technology.
This device is perfectly suited for CDMA base station applications at frequencies from 2110 MHz to 2170 MHz.
The main and peak device, input splitter and output combiner are integrated in a single package.
This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected.
It only requires the proper input/output match and bias setting as with a normal class-AB transistor.
Table 1.
Typical performance RF performance at Th = 25 °C.
Mode of operation W-CDMA [1] [2] [1][2] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W) 8 Gp (dB) 13.
3 ηD (%) 38 ACPR (dBc) −30 PL(3dB) (W) 52 Test signal: 2-carrie...


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