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SIHFPE40

Vishay Siliconix
Part Number SIHFPE40
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Jan 16, 2010
Detailed Description IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Co...
Datasheet PDF File SIHFPE40 PDF File

SIHFPE40
SIHFPE40

Overview
IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 130 17 72 Single D FEATURES 800 2.
0 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available Available RoHS* COMPLIANT TO-247 DESCRIPTION G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.
The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole.
It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247 IRFPE450PbF SiHFPE450-E3 IRFPE450 SiHFPE450 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER www.
DataSheet4U.
com Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw TC = 25 °C EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 800 ± 20 5.
4 3.
4 22 1.
2 490 5.
4 15 150 2.
0 - 55 to + 150 300d 10 1.
1 W/°C mJ A mJ W V/ns °C lbf · in N·m A UNIT V Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = 50 V, starting TJ = 25 °C, L = 31 mH, RG = 25 Ω, IAS = 5.
4 A (see fig.
12).
c.
ISD ≤ 5.
4 A, dI/dt ≤ 120 A/µs, VDD ≤ 600, TJ ≤ 150 °C.
...


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