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CG6264AM

Part Number	CG6264AM
Manufacturer	Weida Semiconductor
Description	2Mb (128K x 16) Pseudo Static RAM
Published	Jan 25, 2010
Detailed Description	ADVANCE INFORMATION CG6264AM 2Mb (128K x 16) Pseudo Static RAM Features • Wide voltage range: 2.70V–3.30V • Access Tim...
Datasheet	CG6264AM PDF File

Overview

ADVANCE INFORMATION CG6264AM 2Mb (128K x 16) Pseudo Static RAM Features • Wide voltage range: 2.
70V–3.
30V • Access Time: 70ns • Ultra-low active power — Typical active current: 2.
0mA @ f = 1 MHz • • • • • — Typical active current: 13mA @ f = fmax Ultra low standby power Easy memory expansion with CE, CE2, and OE features Automatic power-down when deselected CMOS for optimum speed/power Offered in a 48 Ball BGA Package more than 99% The device can also be put into standby mode when deselected (CE HIGH or CE2 LOW or both BHE and BLE are HIGH).
The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CEHIGH or CE2 LOW), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, CE2 HIGH and WE LOW).
The addresses must not be toggled once the read is started on the device.
Writing to the device is accomplished by taking Chip Enables (CE LOW and CE2 HIGH) and Write En...

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CG6264AM 2Mb (128K x 16) Pseudo Static RAM - Weida Semiconductor

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