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HN2A26FS

Toshiba Semiconductor
Part Number HN2A26FS
Manufacturer Toshiba Semiconductor
Description Frequency General-Purpose Amplifier Applications
Published Jan 31, 2010
Detailed Description HN2A26FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN2A26FS Frequency General-Purpose Amplifier Appli...
Datasheet PDF File HN2A26FS PDF File

HN2A26FS
HN2A26FS

Overview
HN2A26FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN2A26FS Frequency General-Purpose Amplifier Applications Unit: mm • • • • • • Two devices are incorporated into a fine-pitch, Small-Mold (6-pin) package.
High voltage: VCEO = −50 V High current: IC = −100 mA (max) High hFE: hFE = 120 to 400 Excellent hFE linearity : hFE (IC = −0.
1 mA)/hFE (IC = −2 mA) = 0.
95 (typ.
) Lead (Pb) - free +0.
02 -0.
04 1.
0±0.
05 0.
1±0.
05 0.
8±0.
05 0.
1±0.
05 0.
35 0.
35 1.
0±0.
05 0.
7±0.
05 1 2 3 6 5 4 Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol V...


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