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AUIRF7665S2TR1

International Rectifier
Part Number AUIRF7665S2TR1
Manufacturer International Rectifier
Description N-Channel MOSFET
Published Feb 4, 2010
Detailed Description PD - 96286 AUTOMOTIVE GRADE • • • • • • • • • • • Advanced Process Technology Optimized for Class D Audio Amplifier App...
Datasheet PDF File AUIRF7665S2TR1 PDF File

AUIRF7665S2TR1
AUIRF7665S2TR1

Overview
PD - 96286 AUTOMOTIVE GRADE • • • • • • • • • • • Advanced Process Technology Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency Low Qg for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI Low Parasitic Inductance for Reduced Ringing and Lower EMI Delivers up to 100W per Channel into 8Ω with No Heatsink Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free AUIRF7665S2TR AUIRF7665S2TR1 DirectFET™ Power MOSFET ‚ V(BR)DSS 100V RDS(on) typ.
51mΩ max.
62mΩ RG (typical) 3.
5Ω Qg (typical) 8.
3nC Applicable DirectFET Outline and Substrate Outline  SB SC M2 M4 SB DirectFET ™ ISOMETRIC L4 L6 L8 Description The AUIRF7665S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging platform to produce a best in class part for Automotive Class D audio amplifier applications.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI.
Moreover the DirectFET packaging platform offers low parasitic inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage ringing that accompanies current transients.
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.
Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C www.
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