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NTB6412AN

ON Semiconductor
Part Number NTB6412AN
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Feb 4, 2010
Detailed Description NTB6412AN, NTP6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 mW Features • • • • Low RDS(on) High Current Capability ...
Datasheet PDF File NTB6412AN PDF File

NTB6412AN
NTB6412AN

Overview
NTB6412AN, NTP6412AN N-Channel Power MOSFET 100 V, 58 A, 18.
2 mW Features • • • • Low RDS(on) High Current Capability 100% Avalanche Tested These are Pb−Free Devices V(BR)DSS Unit V V A 100 V http://onsemi.
com ID MAX (Note 1) 58 A MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Continuous Drain Current RqJC Power Dissipation RqJC Pulsed Drain Current Steady State Steady State TC = 25°C TC = 100°C TC = 25°C PD IDM TJ, Tstg IS EAS Symbol VDSS VGS ID Value 100 $20 58 41 167 240 −55 to +175 58 300 W RDS(ON) MAX 18.
2 mW @ 10 V N−Channel D G A °C A mJ 1 2 3 TO−220AB CASE 221A STYLE 5 3 D2PAK CASE 418B STYLE 2 4 4 S tp = 10 ms Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 44.
7 A, L = 0.
3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds TL 260 °C 1 THERMAL...


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