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KHB9D5N20P

KEC
Part Number KHB9D5N20P
Manufacturer KEC
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Published Feb 8, 2010
Detailed Description SEMICONDUCTOR TECHNICAL DATA General Description KHB9D5N20P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB9D5N20P A O ...
Datasheet PDF File KHB9D5N20P PDF File

KHB9D5N20P
KHB9D5N20P

Overview
SEMICONDUCTOR TECHNICAL DATA General Description KHB9D5N20P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB9D5N20P A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.
2 9.
9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switch mode power supplies.
FEATURES VDSS=200V, ID=9.
5A Drain-Source ON Resistance : RDS(ON)=400m Qg(typ.
)=18.
5nC @VGS = 10V 15.
95 MAX 1.
3+0.
1/-0.
05 _ 0.
1 0.
8 + _ 0.
2 3.
6 + _ 0.
1 2.
8 + 3.
7 0.
5+0.
1/-0.
05 1.
5 _ 0.
3 13.
08 + 1.
46 _ 0.
1 1.
4 + _ 0.
1 1.
27 + _ 0.
2 2.
54 + _ 4.
5 + 0.
2 _ 0.
2 2.
4 + _ 0.
2 9.
2 + 1.
GATE 2.
DRAIN 3.
SOURCE P Q TO-220AB MAXIMUM RATING (Tc=25 ) RATING KHB9D5N20F A F C CHARACTERISTIC SYMBOL KHB9D5N20F UNIT KHB9D5N20P KHB9D5N20F2 E O DIM B MILLIMETERS Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed...


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