RF Power Field Effect Transistors
Description
Freescale Semiconductor Technical Data
Document Number: MRF8S9220H Rev. 0, 11/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Single-...
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