Preliminary Datasheet
RJH60F5DPK
Silicon N Channel IGBT High Speed Power Switching
R07DS0055EJ0300 Rev.3.00
Nov 24, 2010
Features
Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching
tr = 85 ns ty...
