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TPCP8507

Toshiba Semiconductor
Part Number TPCP8507
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Feb 20, 2010
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications DC-DC Converters TPCP8507 Unit...
Datasheet PDF File TPCP8507 PDF File

TPCP8507
TPCP8507

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications DC-DC Converters TPCP8507 Unit: mm • High DC current gain : hFE = 120 to 300 (IC = 0.
1 A) • Low collector-emitter saturation voltage : VCE(sat) = 0.
14 V (max) • High-speed switching : tf = 0.
2 μs (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEX 150 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 7 V DC (Note 1) IC Collector current Pulsed (Note 1) ICP 1.
0 A 2.
0 A Base current IB 0.
1 A Collector power dissipation t = 10 s DC PC (Note 2) 3.
00 1.
25 W W Junc...


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