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TPCP8H01

Part Number	TPCP8H01
Manufacturer	Toshiba Semiconductor
Description	Multi-chip Device Epitaxial Transistor
Published	Feb 20, 2010
Detailed Description	TPCP8H01 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type ww...
Datasheet	TPCP8H01 PDF File

Overview

TPCP8H01 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type www.
DataSheet4U.
com TPCP8H01 2.
4±0.
1 0.
475 1 4 ・Multi-chip discrete device; built-in NPN transistor for main switch and N-ch MOS FET for drive ・High DC current gain: hFE = 250 to 400 (IC = 0.
5 A) (NPN transistor) ・Low collector-emitter saturation voltage: VCE (sat) = 0.
13 V (max) (NPN transistor) ・High-speed switching: tf = 25 ns (typ.
) (NPN transistor) 0.
65 2.
9±0.
1 B A 0.
05 M B 0.
8±0.
05 S 0.
025 S 0.
17±0.
02 0.
28 +0.
1 -0.
11 +0.
13 Absolute Maximum Ratings (Ta = 25°C) Transistor Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Coll...

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