FDFME3N311ZT Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
FDFME3N311ZT
July 2010
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
30 V, 1.8 A, 299 mΩ
Features
General Description
Max rDS(on) = 299 mΩ at VGS = 4.5 V, ID = 1.6 A Max rDS(on) = 410 mΩ at VGS = 2.5 V, ID = 1.3 A Low profile: 0.55 mm maximum in the new package...
