NTMS4802N Power MOSFET
Features
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30 V, 18 A, N−Channel, SO−8
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb−Free Device
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V(BR)DSS 30 V RDS(ON) MAX 4.0 mW @ 10 V 5.5 mW @ 4.5 V N−Channel D ID MAX 18 A
Application...