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HE8404SG

Opnext
Part Number HE8404SG
Manufacturer Opnext
Description GaAlAs Infrared Emitting Diode
Published Mar 8, 2010
Detailed Description www.DataSheet4U.com HE8404SG GaAlAs Infrared Emitting Diode ODE-208-997B (Z) Rev.2 Mar. 2005 Description The HE8404SG ...
Datasheet PDF File HE8404SG PDF File

HE8404SG
HE8404SG

Overview
www.
DataSheet4U.
com HE8404SG GaAlAs Infrared Emitting Diode ODE-208-997B (Z) Rev.
2 Mar.
2005 Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode.
It is suitable for use as the light source in a wide range of optical control and sensing equipment.
Features • High efficiency and high output power Package Type • HE8404SG: SG1 Internal Circuit 1 2 www.
DataSheet4U.
com HE8404SG Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3 –20 to +60 –40 to +90 Unit mA V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise time Fall time Symbol PO λp ∆λ VF IR Ct tr tf Min 40 790 — — — — — — Typ — 820 50 — — 30 10 10 Max — 850 60 2.
5 100 — — — Unit mW nm nm V µA pF ns ns Test Conditions IF = 200 mA IF = 200 mA IF = 200 mA IF = 200 mA VR = 3 V...


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