N-Channel MOSFET
Description
TK50X15J1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ)
TK50X15J1
DC-DC Converters
Low drain-source ON-resistance: RDS (ON) = 22 mΩ (typ.) High forward transfer admittance: |Yfs| = 90 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 150 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
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