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MRFG35002N6AT1

Part Number	MRFG35002N6AT1
Manufacturer	Freescale Semiconductor
Description	Gallium Arsenide PHEMT RF Power Field Effect Transistor
Published	Mar 20, 2010
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 1, 12/2008 www.DataSheet4U.com Gallium Arsen...
Datasheet	MRFG35002N6AT1 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev.
1, 12/2008 www.
DataSheet4U.
com Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications.
Characterized from 500 to 5000 MHz.
Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 6 Volts, IDQ = 65 mA, Pout = 158 mWatts Avg.
, 3550 MHz, Channel Bandwidth = 3.
84 MHz, PAR = 8.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 10 dB Drain Efficiency — 26.
5% ACPR @ 5 MHz Offset — - 42 dBc in 3.
84 MHz Channel Bandwidth • 1.
5 Watts P1dB @ 3550 MHz, CW Features • Excellent Ph...

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MRFG35002N6AT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor - Freescale Semiconductor

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