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BLA0912-250R

NXP Semiconductors
Part Number BLA0912-250R
Manufacturer NXP Semiconductors
Description Avionics LDMOS power transistor
Published Mar 21, 2010
Detailed Description BLA0912-250R Avionics LDMOS power transistor Rev. 01 — 3 March 2010 www.DataSheet4U.com Product data sheet 1. Product...
Datasheet PDF File BLA0912-250R PDF File

BLA0912-250R
BLA0912-250R

Overview
BLA0912-250R Avionics LDMOS power transistor Rev.
01 — 3 March 2010 www.
DataSheet4U.
com Product data sheet 1.
Product profile 1.
1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap.
The common source is connected to the mounting flange.
Table 1.
Test information Typical RF performance measured in common source class-AB test circuit at PL = 250 W and 960 MHz to 1215 MHz frequency band.
Th = 25 °C; Zth(j-h) = 0.
15 K/W; unless otherwise specified.
Mode of operation all modes TCAS Mode-S JTIDS f (MHz) 960 to 1215 1030 to 1090 1030 to 1090 1030 to 1090 960 to 1215 tp (μs) 100 32 128 340 δ % 10 2 1 VDS PL (V...


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