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PMG370XN
N-channel µTrenchMOS™ extremely low level FET
MBD128
Rev. 01 — 13 February 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Surface mounted package s Low on-state resistance s Footprint 40% smaller than SOT23...