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ARF1505

Advanced Power Technology
Part Number ARF1505
Manufacturer Advanced Power Technology
Description N-Channel Power MOSFET
Published Mar 25, 2010
Detailed Description S D S ARF1505 www.DataSheet4U.com D G S ARF1505 BeO 1525-xx RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE • Specifie...
Datasheet PDF File ARF1505 PDF File

ARF1505
ARF1505

Overview
S D S ARF1505 www.
DataSheet4U.
com D G S ARF1505 BeO 1525-xx RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE • Specified 300 Volt, 27.
12 MHz Characteristics: • Output Power = 750 Watts.
• Gain = 17dB (Class C) • Efficiency > 75% MAXIMUM RATINGS Symbol VDSS ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
S G S 300V 750W 40MHz The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
• High Performance Power RF Package.
• Very High Breakdown for Improved Ruggedness.
• Low Thermal Resistance.
• Nitride Passivated Die for Improved Reliability.
All Ratings: TC = 25°C unless otherwise specified.
ARF1505 UNIT Volts Amps Volts Watts °C 1200 25 ±30 1500 -55 to 200 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS g fs V isolation VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Voltage 1 MIN TYP MAX UNIT Volts µA nA mhos Volts 1200 8 9.
5 100 1000 ±400 5.
5 2500 3 5 6 (ID(ON) = 12.
5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.
8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 12.
5A) RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) Gate Threshold Voltage (VDS = VGS, ID = 50mA) Volts THERMAL CHARACTERISTICS Symbol RθJC RθCS Characteristic (per package unless otherwise noted) Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.
) MIN TYP MAX UNIT 6-2005 050-4922 Rev C 0.
12 0.
09 °C/W CAUTION: These Devices are Sensitive to Electrostatic D...


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