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HAT2218R

Renesas Technology
Part Number HAT2218R
Manufacturer Renesas Technology
Description Silicon N-Channel Power MOSFET
Published Apr 13, 2010
Detailed Description www.DataSheet4U.com HAT2218R Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ...
Datasheet PDF File HAT2218R PDF File

HAT2218R
HAT2218R

Overview
www.
DataSheet4U.
com HAT2218R Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G0396-0300 Rev.
3.
00 Aug.
23.
2004 Features • • • • Low on-resistance Capable of 4.
5 V gate drive High density mounting Built-in Schottky Barrier Diode Outline SOP-8 7 8 D1 D1 5 6 S1/D2 S1/D2 8 2 G1 4 G2 5 7 6 3 1 2 4 S1/D2(kelvin) 1 S2 3 MOS1 MOS2 and Schottky Barrier Diode Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Symbol VDSS VGSS ID ID(pulse)Note1 IDR MOS1 30 ±20 7.
5 60 7.
5 MOS2 & SBD 30 ±12 8.
0 64 8.
0 Unit V V A A A W Channel dissipation Pch Note2 1.
5 1...


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