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HAT2265H

Renesas Technology
Part Number HAT2265H
Manufacturer Renesas Technology
Description Silicon N-Channel Power MOSFET
Published Apr 13, 2010
Detailed Description www.DataSheet4U.com HAT2265H Silicon N Channel Power MOS FET Power Switching Rev.0.00 Sept.2004 Features • High speed ...
Datasheet PDF File HAT2265H PDF File

HAT2265H
HAT2265H

Overview
www.
DataSheet4U.
com HAT2265H Silicon N Channel Power MOS FET Power Switching Rev.
0.
00 Sept.
2004 Features • High speed switching • Capable of 4.
5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 2.
5 mΩ typ.
(at VGS = 10 V) • Lead Free Outline LFPAK 5 5 D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 Rev.
0.
00, Sept.
2004, page 1 of 5 www.
DataSheet4U.
com HAT2265H Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) IDR IAP Note 2 Note 2 Note3 Note1 Ratings 30 ±20 55 220 55 30 90 30 4.
17 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C EAR Pch θch-C Tch Tstg Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tch = 25°C, Rg ≥ 50 Ω 3.
Tc = 25°C Rev.
0.
00, Sept.
2004, page 2 of 5 www.
DataSheet4U.
com HAT2265H Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4.
Pulse test Symbol Min V(BR)DSS 30 Typ — — — — — 2.
5 3.
4 100 5180 1200 380 0.
5 33 15 7.
1 13 65 60 9.
5 0.
81 40 Max — — ± 10 1 2.
5 3.
3 5.
3 — — — — — — — — — — — — 1.
06 — Unit V V µA µA V mΩ mΩ S pF pF pF Ω nc nc nc ns ns ns ns V ns VDD = 10 V VGS = 4.
5 V ID = 55 A VGS = 10 V, ID = 27.
5 A VDD ≅ 10 V RL = 0.
36 Ω Rg = 4.
7 Ω IF = 55 A, VGS = 0 Note4 Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = ...


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