DatasheetsPDF.com

IXFK90N20

IXYS Corporation
Part Number IXFK90N20
Manufacturer IXYS Corporation
Description HiPerFET Power MOSFETs
Published Apr 14, 2010
Detailed Description www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Tes...
Datasheet PDF File IXFK90N20 PDF File

IXFK90N20
IXFK90N20

Overview
www.
DataSheet4U.
com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS(on) 23 mW 23 mW 20 mW 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns TO-264 AA TO-264 AA (IXFK) Maximum Ratings IXFK IXFN IXFN 90N20 100N20 106N20 200 200 200 V 200 ±20 ±30 90  76 360 50 30 5 500 200 ±20 ±30 100 400 50 30 5 520 150 -55 .
.
.
+150 200 V 20 V 20 V 106 A A 424 A A 30 mJ 5 V/ns W °C °C °C °C V~ V~ VDSS VDGR VGS VGSM ID25 ID80 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability TC = 80°C, limited by external leads TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C G D S (TAB) miniBLOC, SOT-227 B (IXFN) E153432 S D G G S S S D G = Gate S = Source D = Drain TAB = Drain -55 .
.
.
+150 Either Source terminal at miniBLOC can be used as Main or Kelvin Source 1.
6 mm (0.
063 in) from case for 10 s 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s 300 0.
9/6 10 2500 3000 Mounting torque Terminal connection torque 1.
5/13 Nm/lb.
in.
1.
5/13 Nm/lb.
in.
30 g Features International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier l q q q q q q q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
200 2 4 ±200 TJ = 25°C TJ = 125°C IXFK90N20 IXFN100N20 IXFN106N20 400 2 0.
023 0.
023 0.
020 V V nA mA mA W W W VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 8 mA VGS = ±20 VDC, VDS = 0 VDS = 0.
8 • VDSS VGS = 0 V VGS = 10 V, ID = 0.
5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % Applications DC-DC converte...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)