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IXFT60N20F

IXYS Corporation
Part Number IXFT60N20F
Manufacturer IXYS Corporation
Description HiPerRFTM Power MOSFETs
Published Apr 14, 2010
Detailed Description Advance Technical Information www.DataSheet4U.com HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhanc...
Datasheet PDF File IXFT60N20F PDF File

IXFT60N20F
IXFT60N20F

Overview
Advance Technical Information www.
DataSheet4U.
com HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 60N20F IXFT 60N20F VDSS ID25 RDS(on) = = = 200V 60A 38mΩ trr ≤ 200 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.
6 mm (0.
063 in.
) from case for 10 s Mounting torque TO-247 TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings (TAB) 200 200 ± 20 ± 30 60 240 60 35 1.
5 10 315 -55 .
.
.
+150 150 -55 .
.
.
+150 300 V V V V A A A mJ J V/ns W °C °C °C °C G = Gate, S = Source, TO-268 (IXFT) Case Style G S D = Drain, TAB = Drain (TAB) Features l l l 1.
13/10 Nm/lb.
in.
6 4 g g l l RF capable MOSFETs Double metal process for lo...


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