DatasheetsPDF.com

IXEN60N120D1

IXYS Corporation
Part Number IXEN60N120D1
Manufacturer IXYS Corporation
Description NPT3 IGBT in miniBLOC package
Published Apr 15, 2010
Detailed Description IXEN 60N120 IXEN 60N120D1 www.DataSheet4U.com NPT3 IGBT in miniBLOC package IC25 = 100 A = 1200 V VCES VCE(sat) typ. =...
Datasheet PDF File IXEN60N120D1 PDF File

IXEN60N120D1
IXEN60N120D1

Overview
IXEN 60N120 IXEN 60N120D1 www.
DataSheet4U.
com NPT3 IGBT in miniBLOC package IC25 = 100 A = 1200 V VCES VCE(sat) typ.
= 2.
1 V C G G C miniBLOC, SOT-227 B E153432 G E E E IXEN 60N120 IXEN 60N120D1 C = Collector G = Gate E = Emitter * E C * Either Emitter terminal can be used as Main or Kelvin Emitter IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 100 65 100 VCES 10 445 V V A A A µs W Features • NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • optional HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current • miniBLOC package - isolated copper base plate - screw terminals - kelvin emitter terminal for easy drive - industry standard outline Applications • single switches • choppers with complementary free wheeling diode • phaselegs, H bridges, three phase bridges e.
g.
for - power supplies, UPS - AC, DC and SR drives - induction heating Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min.
typ.
max.
2.
1 2.
5 4.
5 0.
8 200 80 50 680 30 7.
2 4.
8 3.
8 350 2.
7 6.
5 0.
8 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.
28 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 60 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 2 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 60 A VGE = ±15 V; RG = 22 Ω VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 50 A © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr.
15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-4 IXYS Corporation 3540 Bassett...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)