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IXER35N120D1

Part Number	IXER35N120D1
Manufacturer	IXYS Corporation
Description	NPT3 IGBT with Diode
Published	Apr 15, 2010
Detailed Description	Advanced Technical Information www.DataSheet4U.com NPT3 IGBT with Diode in ISOPLUS 247TM IXER 35N120D1 IC25 VCES VCE(s...
Datasheet	IXER35N120D1 PDF File

Overview

Advanced Technical Information www.
DataSheet4U.
com NPT3 IGBT with Diode in ISOPLUS 247TM IXER 35N120D1 IC25 VCES VCE(sat) typ.
C G = 50 A = 1200 V = 2.
2 V ISOPLUS 247TM E153432 G C E E G = Gate Isolated Backside* C = Collector E = Emitter *Patent pending IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 50 32 50 VCES 10 200 V V A A A µs W Features • NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switc...

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IXER35N120D1 NPT3 IGBT with Diode - IXYS Corporation

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