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APT200GT60JRDQ4

Microsemi Corporation
Part Number APT200GT60JRDQ4
Manufacturer Microsemi Corporation
Description Thunderbolt IGBT
Published Apr 17, 2010
Detailed Description www.DataSheet4U.com APT200GT60JRDQ4 600V, 200A, VCE(ON) = 2.0V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a ne...
Datasheet PDF File APT200GT60JRDQ4 PDF File

APT200GT60JRDQ4
APT200GT60JRDQ4

Overview
www.
DataSheet4U.
com APT200GT60JRDQ4 600V, 200A, VCE(ON) = 2.
0V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new generation of high voltage power IGBTs.
Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.
E G C E Features • Low Forward Voltage Drop • Low Tail Current • Integrated Gate Resistor Low EMI, High Reliability • RoHS Compliant • RBSOA and SCSOA Rated • High Frequency Switching to 50KHz • Ultra Low Leakage Current S ISOTOP ® OT 22 7 "UL Recognized" file # E145592 Maximum Ratings Symbol Parameter VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range All Ratings: TC = 25°C unless otherwise specified.
Ratings 600 Volts ±30 195 100 600 600A @ 600V 595 -55 to 150 Watts °C Amps Unit Static Electrical Characteristics Symbol Characteristic / Test Conditions V(BR)CES VGE(TH) VCE(ON) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1.
0mA) Gate Threshold Voltage (VCE = VGE, IC = 4.
0mA, Tj = 25°C) Collector Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 25°C) Collector Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±30V) Min 600 3 1.
6 - Typ 4 2.
0 2.
5 - Max 5 Unit Volts 2.
5 50 μA 600 nA 052-6299 Rev B 5 - 2009 ICES IGES 1500 CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.
microsemi.
com Dynamic Characteristic Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capac...


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