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IS41LV16400

Integrated Silicon Solution
Part Number IS41LV16400
Manufacturer Integrated Silicon Solution
Description 4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Published Apr 22, 2010
Detailed Description IS41LV16400 4M x 16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES • Extended Data-Out (EDO) Page Mode access cycle •...
Datasheet PDF File IS41LV16400 PDF File

IS41LV16400
IS41LV16400

Overview
IS41LV16400 4M x 16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs; tristate I/O • Refresh Interval: 4,096 cycles / 64 ms • Auto refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden • Low Standby power dissipation: – 1.
8mW(max) CMOS Input Level • Single power supply: 3.
3V ± 10% • Byte Write and Byte Read operation via two CAS • Extended Temperature Range -30oC to 85oC • Industrail Temperature Range -40 C to 85 C o o www.
DataSheet4U.
com ISSI ® NOVEMBER 1999 DESCRIPTION The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories.
These devices offer an accelerated cycle access called EDO Page Mode.
EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.
The Byte Write control, of upper and lower byte, makes the IS41LV16400 ideal for use in 16-bit wide data bus systems.
These features make the S41LV16400 ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications.
The IS41LV16400 is packaged in a 50-pin TSOP (Type II).
JEDEC standard pinout.
PIN CONFIGURATION 50-Pin TSOP (Type II) VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC VCC W RAS NC NC NC NC A0 A1 A2 A3 A4 A5 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 GND I/O15 I/O14 I/O13 I/O12 GND I/O11 I/O10 I/O9 I/O8 NC GND LCAS UCAS OE NC NC NC A11 A10 A9 A8 A7 A6 GND PIN DESCRIPTIONS A0-A11 I/O0-15 WE OE RAS UCAS LCAS Vcc GND NC Address Inputs Data Inputs/Outputs Write Enable Output Enable Row Address Strobe Upper Column Address Strobe Lower Column Address Strobe Power Ground No Connection KEY TIMING PARAMETERS Parameter Max.
RAS Access Time (tRAC) Max.
CAS Access Time (tCAC) Max.
Column Address Access Time (tAA) Min.
EDO Page Mode Cycle Time (tPC)...


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