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H55S1262EFP-A3E

Hynix Semiconductor
Part Number H55S1262EFP-A3E
Manufacturer Hynix Semiconductor
Description 128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O
Published May 3, 2010
Detailed Description www.DataSheet4U.com 128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O Specification of 128M (8Mx16bit) Mobile SDRA...
Datasheet PDF File H55S1262EFP-A3E PDF File

H55S1262EFP-A3E
H55S1262EFP-A3E


Overview
www.
DataSheet4U.
com 128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O Specification of 128M (8Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x16 This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 1.
2 /Aug.
2009 1 11 128Mbit (8Mx16bit) Mobile SDR Memory H55S1262EFP Series www.
DataSheet4U.
com Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No.
0.
1 0.
2 Initial Draft - Define IDD specification -.
Correct Temp range(p.
9 & p.
10) -.
Modify IDD Values(p.
11 & p.
12) -.
Omit a typo in a packa...



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