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SEMIX352GB128DS

Semikron International
Part Number SEMIX352GB128DS
Manufacturer Semikron International
Description IGBT
Published May 13, 2010
Detailed Description SEMiX352GB128Ds Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V Tj = 125 °...
Datasheet PDF File SEMIX352GB128DS PDF File

SEMIX352GB128DS
SEMIX352GB128DS

Overview
SEMiX352GB128Ds Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V Tj = 125 °C VCES ≤ 1200 V VGES tpsc Tj = 150 °C Tc = 25 °C Tc = 80 °C 1200 377 268 200 400 -20 .
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20 10 -40 .
.
.
150 Tc = 25 °C Tc = 80 °C 297 204 200 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 400 2000 -40 .
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150 600 -40 .
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125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX®2s SPT IGBT Modules SEMiX352GB128Ds Tj Inverse diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Preliminary Data www.
DataSheet4U.
com Features • Homogeneous Si • SPT = Soft-Punch-Through technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no.
E63532 Tj = 150 °C Typical Applications • AC inverter drives • UPS • Electronic welders up to 20 kHz Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT IC = 200 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V VGE=VCE, IC = 8 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V.
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+ 15 V Tj = 25 °C VCC = 600 V IC = 200 A Tj = 125 °C RG on = 3 Ω RG off = 3 Ω Tj = 25 °C Tj = 125 °C f = 1 MHz f = 1 MHz f = 1 MHz 18.
9 1.
24 0.
78 1920 2.
00 230 55 20 585 90 21 0.
083 Tj = 25 °C Tj = 125 °C 4.
5 1.
9 2.
10 1 0.
9 4.
5 6.
0 5 0.
1 2.
35 2.
55 1.
15 1.
05 6.
0 7.
5 6.
5 0.
3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω ns ns mJ ns ns mJ K/W Conditions min.
typ.
max.
Unit GB © by SEMIKRON Rev.
12 – 02.
12.
2008 1 SEMiX352GB128Ds Characteristics Symbol Conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C rF Tj = 25 °C Tj = 125 °C IF = 200 A Tj = 125 °C di/dtoff = 5350 A/µs T = 125 °C j VGE = -15 V T j = 125 °C VCC = 600 V per diode 0.
75 0.
5 3.
8 4.
0 min.
typ.
2.
0 1.
8 1.
1 0.
85 4.
5 4.
8 240 31 11 max.
2.
5 2.
3 1.
45 1.
2 5.
3 5.
5 Unit V V V V mΩ mΩ A µC mJ Inverse diode VF = VEC IF = 200 A VGE = 0 V chiplevel VF0 SEMiX®2s SPT IGBT Modul...


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