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MRF5S9080NR1

Freescale Semiconductor
Part Number MRF5S9080NR1
Manufacturer Freescale Semiconductor
Description GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
Published May 31, 2010
Detailed Description Freescale Semiconductor Technical Data Document Number: MRF5S9080N Rev. 1, 5/2006 RF Power Field Effect Transistors N...
Datasheet PDF File MRF5S9080NR1 PDF File

MRF5S9080NR1
MRF5S9080NR1

Overview
Freescale Semiconductor Technical Data Document Number: MRF5S9080N Rev.
1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz.
Suitable for TDMA, CDMA, and multicarrier amplifier applications.
GSM Application • Typical GSM Performance: VDD = 26 Volts, IDQ = 600 mA, Pout = 80 Watts CW, Full Frequency Band (869 - 894 MHz or 921 - 960 MHz).
Power Gain — 18.
5 dB Drain Efficiency — 60% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 550 mA, Pout = 36 Watts Avg.
, Full Frequency Band (869 - 894 MHz or 921 - 960 MHz).
Power Gain — 19 dB www.
D...


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